Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
150V 2.6A 105mR 2-CH N-CH MOSFET SOIC Product overview: SI7956DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.6A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7956DP-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 794328-SI7956DP-T1-E
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 2.6A
Power - Max: 1.4W
Family Name: Si7956DP
Categories: Discrete Semiconductor Products
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Introduction Date: May 26, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 150V 2.6A PPAK SO-8
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
MOSFET 2N-CH 150V 2.6A PPAK SO8
DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20VRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7956DP-T1-E3CT-ND | 2088-SI7956DP-T1-E3 | 794328-SI7956DP-T1-E3 | SI7956DP-T1-E3 | SI7956DP-T1-E3 | SI7956DP-T1-E3 | 57J5757 |
| Product Name | FET, MOSFET Arrays | 150V 2.6A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | SO-8; PowerPAK® SO-8 Dual | SO-8; PowerPAKR SO-8 Dual | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| PD | 1400 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
