Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7956DP-T1-E3

Description
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI7956DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7956DP-T1-E3
FET, MOSFET Arrays SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8

MOSFET 2N-CH 150V 2.6A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 - 794328-SI7956DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3
794328-SI7956DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 794328-SI7956DP-T1-E3
Manufacturer: Vishay Siliconix Win Source Part Number: 794328-SI7956DP-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 2.6A Power - Max: 1.4W Family Name: Si7956DP Categories: Discrete Semiconductor Products Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V Introduction Date: May 26, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794328-SI7956DP-T1-E3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 2.6A
Power - Max: 1.4W
Family Name: Si7956DP
Categories: Discrete Semiconductor Products
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Introduction Date: May 26, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7956DP-T1-E3CT-ND
FET, MOSFET Arrays SI7956DP-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7956DP-T1-E3TR-ND
FET, MOSFET Arrays SI7956DP-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7956DP-T1-E3DKR-ND
FET, MOSFET Arrays SI7956DP-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 150V Vds 20V Vgs PowerPAK SO-8

MOSFET 150V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7956DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7956DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO8

MOSFET 2N-CH 150V 2.6A PPAK SO8

Supplier's Site
Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay - 57J5757 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay
57J5757
Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay 57J5757
DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20VRoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20VRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7956DP-T1-E3 794328-SI7956DP-T1-E3 SI7956DP-T1-E3CT-ND SI7956DP-T1-E3 SI7956DP-T1-E3 57J5757
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts
IDSS 2600 milliamps 4100 milliamps
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