Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 SI7956DP-T1-E3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794328-SI7956DP-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 2.6A Power - Max: 1.4W Family Name: Si7956DP Categories: Discrete Semiconductor Products Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V Introduction Date: May 26, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794328-SI7956DP-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 2.6A Power - Max: 1.4W Family Name: Si7956DP Categories: Discrete Semiconductor Products Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V Introduction Date: May 26, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 - 794328-SI7956DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3
794328-SI7956DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 794328-SI7956DP-T1-E3
Manufacturer: Vishay Siliconix Win Source Part Number: 794328-SI7956DP-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 2.6A Power - Max: 1.4W Family Name: Si7956DP Categories: Discrete Semiconductor Products Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V Introduction Date: May 26, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794328-SI7956DP-T1-E3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 2.6A
Power - Max: 1.4W
Family Name: Si7956DP
Categories: Discrete Semiconductor Products
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Introduction Date: May 26, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7956DP-T1-E3
FET, MOSFET Arrays SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8

MOSFET 2N-CH 150V 2.6A PPAK SO-8

Supplier's Site Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7956DP-T1-E3CT-ND
FET, MOSFET Arrays SI7956DP-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7956DP-T1-E3TR-ND
FET, MOSFET Arrays SI7956DP-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7956DP-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7956DP-T1-E3DKR-ND
FET, MOSFET Arrays SI7956DP-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay - 57J5757 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay
57J5757
Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay 57J5757
DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20VRoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; On Resistance Rds(on):0.115ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20VRoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 150V Vds 20V Vgs PowerPAK SO-8

MOSFET 150V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7956DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7956DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO8

MOSFET 2N-CH 150V 2.6A PPAK SO8

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 794328-SI7956DP-T1-E3 SI7956DP-T1-E3 SI7956DP-T1-E3CT-ND 57J5757 SI7956DP-T1-E3 SI7956DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays Dual N Channel Mosfet, 150V, Soic, Full Reel; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 Dual SO-8; PowerPAK® SO-8 Dual TO-3 SO-8; PowerPAKR SO-8 Dual
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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