MOSFET 2N-CH 100V 3.8A PPAK SO-8
Dual N-Ch MOSFET 100V 49mR 3.8A PowerPAK SO-8 Product overview: SI7942DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 100V, 3.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7942DP-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 100V 3.8A 1.4W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 3.8A 1.4W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 3.8A 1.4W Surface Mount PowerPAK® SO-8 Dual
Manufacturer: Vishay
Win Source Part Number: 028696-SI7942DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7942DP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.8A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 24nC @ 10V
Maximum Rds On at Id,Vgs: 49 mOhm @ 5.9A, 10V
Introduction Date: February 27, 2003
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 100V 3.8A PPAK SO8
MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.8A; On Resistance Rds(on):0.041ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 100V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.041ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20VRoHS Compliant: Yes
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7942DP-T1-E3 | 278-SI7942DP-T1-E3 | SI7942DP-T1-E3DKR-ND | 028696-SI7942DP-T1-E3 | SI7942DP-T1-E3 | 70AC6515 | 06J8186 | SI7942DP-T1-E3 |
| Product Name | FET, MOSFET Arrays | Dual 100V 3.8A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7942DP-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 100V, 3.8A, 150Deg C; Transistor Polarity Vishay | Dual N Channel Mosfet, 100V, Soic, Full Reel; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 3800 milliamps | 3800 milliamps | 5900 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
