Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7940DP-T1-E3

Description
MOSFET 2N-CH 12V 7.6A PPAK SO-8
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Description
MOSFET 2N-CH 12V 7.6A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI7940DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7940DP-T1-E3
FET, MOSFET Arrays SI7940DP-T1-E3
MOSFET 2N-CH 12V 7.6A PPAK SO-8

MOSFET 2N-CH 12V 7.6A PPAK SO-8

Supplier's Site Datasheet
Singapore
12V 7.6A MOSFET Transistor
289-SI7940DP-T1-E3
12V 7.6A MOSFET Transistor 289-SI7940DP-T1-E3
MOSFET 2N-CH 12V 7.6A PPAK SO8 Product overview: SI7940DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7940DP-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 12V 7.6A PPAK SO8 Product overview: SI7940DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7940DP-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7940DP-T1-E3 - 064582-SI7940DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7940DP-T1-E3
064582-SI7940DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7940DP-T1-E3 064582-SI7940DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 064582-SI7940DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 7.6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V Alternative Parts (Cross-Reference): Si7940DP-E3; SI7234DP-T1-GE3; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064582-SI7940DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Alternative Parts (Cross-Reference): Si7940DP-E3; SI7234DP-T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7940DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7940DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7940DP-T1-E3
MOSFET 2N-CH 12V 7.6A PPAK SO8

MOSFET 2N-CH 12V 7.6A PPAK SO8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7940DP-T1-E3 289-SI7940DP-T1-E3 064582-SI7940DP-T1-E3 SI7940DP-T1-E3
Product Name FET, MOSFET Arrays 12V 7.6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7940DP-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts
IDSS 7600 milliamps
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