MOSFET 2N-CH 12V 7.6A PPAK SO-8
MOSFET 2N-CH 12V 7.6A PPAK SO8 Product overview: SI7940DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7940DP-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 064582-SI7940DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Alternative Parts (Cross-Reference): Si7940DP-E3; SI7234DP-T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 12V 7.6A PPAK SO8
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7940DP-T1-E3 | 289-SI7940DP-T1-E3 | 064582-SI7940DP-T1-E3 | SI7940DP-T1-E3 |
| Product Name | FET, MOSFET Arrays | 12V 7.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7940DP-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 12 volts | 12 volts | ||
| IDSS | 7600 milliamps |