Mosfet Array 2 P-Channel (Dual) 30V 4.3A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 P-Channel (Dual) 30V 4.3A 1.3W Surface Mount PowerPAK® 1212-8 Dual
P-CH MOSFET, -30V, 4.3A, 47mR, SMT, 8-Pin Product overview: SI7923DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 4.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7923DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028694-SI7923DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7923DN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 10V
Maximum Rds On at Id,Vgs: 47 mOhm @ 6.4A, 10V
Alternative Parts (Cross-Reference): QS8J4; QS8J4TR; ; Si7923DN-E3; SI7905DN-T1-GE3; DMP4050SSD; DMP4050SSD-13;
Introduction Date: December 04, 2003
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 30V 4.3A PPAK 1212
MOSFET 2P-CH 30V 4.3A 1212-8
MOSFET, DUAL P-CH, -30V, POWERPAK 1212; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-6.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; RoHS Compliant: Yes
DUAL P CHANNEL MOSFET, -30V, 6.4A, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.4A; On Resistance Rds(on):0.075ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5VRoHS Compliant: Yes
DUAL P CHANNEL MOSFET, -30V, -6.4A; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.4A; On Resistance Rds(on):0.075ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7923DN-T1-GE3TR-ND | 278-SI7923DN-T1-GE3 | 028694-SI7923DN-T1-GE3 | SI7923DN-T1-GE3 | SI7923DN-T1-GE3 | 07AH4771 | 33P5450 | SI7923DN-T1-GE3 |
| Product Name | FET, MOSFET Arrays | -30V 4.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7923DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | Mosfet, Dual P-Ch, -30V, Powerpak 1212; Transistor Polarity Vishay | Dual P Channel Mosfet, -30V, 6.4A, Full Reel; Transistor Polarity Vishay | MOSFET |
| Package Type | PowerPAK® 1212-8 Dual | SOT3; PowerPAK 1212-8 Dual | PowerPAK® 1212-8 Dual | TO-3 | TO-3 | |||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| PD | 1300 milliwatts | 1300 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts | 30 volts |
