100V 1.8A N-CH MOSFET 2-Ch Surface Mount Product overview: SI7922DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7922DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 064581-SI7922DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7922DN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 8nC @ 10V
Maximum Rds On at Id,Vgs: 195 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): IRFHM792TRPBF; IRFHM792TR2PBF; TPC8214-H(TE12L,Q; TPC8214-H(T2LSIS,Q;
Introduction Date: November 05, 2002
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
MOSFET 2N-CH 100V 1.8A 1212-8
MOSFET 2N-CH 100V 1.8A PPAK 1212
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7922DN-T1-GE3 | 064581-SI7922DN-T1-GE3 | SI7922DN-T1-GE3CT-ND | SI7922DN-T1-GE3 | SI7922DN-T1-GE3 | SI7922DN-T1-GE3 |
| Product Name | SMD 100V 1.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7922DN-T1-GE3 | FET, MOSFET Arrays | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| PD | 1300 milliwatts | 1300 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 100 volts | 100 volts |
