MOSFET 2P-CH 20V 5A PPAK 1212-8
Mosfet Array 2 P-Channel (Dual) 20V 5A 1.3W Surface Mount PowerPAK® 1212-8 Dual
P-CH MOSFET 20V 5A 37mR TrenchFET® Surface Mount Product overview: SI7913DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7913DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096210-SI7913DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 4.5V
Maximum Rds On at Id,Vgs: 37 mOhm @ 7.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Portable Devices
DUAL P CHANNEL MOSFET, -20V, 7.4A; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.4A; On Resistance Rds(on):0.066ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V RoHS Compliant: Yes
MOSFET, DUAL/P-CH/20V/7.4A/P
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
MOSFET 2P-CH 20V 5A PPAK 1212
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7913DN-T1-GE3 | SI7913DN-T1-GE3TR-ND | 278-SI7913DN-T1-GE3 | 1096210-SI7913DN-T1-GE3 | 33P5449 | 57AJ0469 | SI7913DN-T1-GE3 | SI7913DN-T1-GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | SMD 20V 5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7913DN-T1-GE3 | Dual P Channel Mosfet, -20V, 7.4A; Transistor Polarity Vishay | Mosfet, Dual/p-Ch/20V/7.4A/powerpak 1212 Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 5000 milliamps | 7400 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
