Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7911DN-T1-E3 SI7911DN-T1-E3

Manufacturer: Vishay Win Source Part Number: 108599-SI7911DN-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.2A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 15nC @ 4.5V Maximum Rds On at Id,Vgs: 51 mOhm @ 5.7A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Portable Devices