Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7909DN-T1-E3 SI7909DN-T1-E3

Manufacturer: Vishay
Win Source Part Number: 211673-SI7909DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 1V @ 700μA
Max Gate Charge: 24nC @ 4.5V
Maximum Rds On at Id,Vgs: 37 mOhm @ 7.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Portable Devices

MOSFET 2P-CH 12V 5.3A PPAK 1212 Product overview: SI7909DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7909DN-T1-E3 can be used for catalog matching and distributor lookup.