2-Ch N-Ch MOSFET, 20V, 6A, 30mR, PowerPAK-8 Product overview: SI7904BDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7904BDN-T1-GE
Manufacturer: Vishay
Win Source Part Number: 028690-SI7904BDN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 17.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 8V
Max Input Capacitance: 860pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7.1A, 4.5V
Alternative Parts (Cross-Reference): IRF7530TR; STS5DNF20V; Si7904BDN-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual
MOSFET 2N-CH 20V 6A PPAK 1212-8
MOSFET 2N-CH 20V 6A PPAK 1212
MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
DUAL N CHANNEL MOSFET, 20V, 6A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 6A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI7904BDN-T1-GE3 | 028690-SI7904BDN-T1-GE3 | SI7904BDN-T1-GE3CT-ND | SI7904BDN-T1-GE3 | SI7904BDN-T1-GE3 | SI7904BDN-T1-GE3 | 26R1941 |
| Product Name | 20V 6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7904BDN-T1-GE3 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual N Channel Mosfet, 20V, 6A; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| PD | 2500 milliwatts | 17800 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| Package Type | SOT3; PowerPAK 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | TO-3 |
