Manufacturer: Vishay
Win Source Part Number: 122284-SI7904BDN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 17.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 8V
Max Input Capacitance: 860pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7.1A, 4.5V
Alternative Parts (Cross-Reference): AO9926B; SI7904BDN; SI7904BDN-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 6A 1212-8
Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual
20V 6A N-CH MOSFET, 30mR Rds On, Surface Mount Product overview: SI7904BDN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7904BDN-T1-E3
MOSFET 2N-CH 20V 6A PPAK 1212
MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
20V 6A 30mΩ@4.5V,7.1A 17.8W 1V@250uA 2 N-Channel PowerPAK 1212-8 MOSFETs ROHS
DUAL N CHANNEL MOSFET, 20V POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 122284-SI7904BDN-T1-E3 | SI7904BDN-T1-E3 | SI7904BDN-T1-E3TR-ND | 2088-SI7904BDN-T1-E3 | SI7904BDN-T1-E3 | SI7904BDN-T1-E3 | 17930-SI7904BDN-T1-E3 | 75M5570 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7904BDN-T1-E3 | FET, MOSFET Arrays | FET, MOSFET Arrays | SMD 20V 6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | 20V 6A 30mΩ@4.5V,7.1A 17.8W 1V@250uA 2 N-Channel PowerPAK 1212-8 MOSFETs ROHS | Dual N Channel Mosfet, 20V Powerpak, Full Reel; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 17800 milliwatts | 17800 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SOT3; PowerPAK 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | TO-3 |
