Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7901EDN-T1-E3 SI7901EDN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 098516-SI7901EDN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 1V @ 800μA Max Gate Charge: 18nC @ 4.5V Maximum Rds On at Id,Vgs: 48 mOhm @ 6.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 098516-SI7901EDN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 1V @ 800μA Max Gate Charge: 18nC @ 4.5V Maximum Rds On at Id,Vgs: 48 mOhm @ 6.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7901EDN-T1-E3 - 098516-SI7901EDN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7901EDN-T1-E3
098516-SI7901EDN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7901EDN-T1-E3 098516-SI7901EDN-T1-E3
Manufacturer: Vishay Win Source Part Number: 098516-SI7901EDN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 1V @ 800μA Max Gate Charge: 18nC @ 4.5V Maximum Rds On at Id,Vgs: 48 mOhm @ 6.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 098516-SI7901EDN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.3A
Gate-Source Threshold Voltage: 1V @ 800μA
Max Gate Charge: 18nC @ 4.5V
Maximum Rds On at Id,Vgs: 48 mOhm @ 6.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7901EDN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7901EDN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7901EDN-T1-E3
MOSFET 2P-CH 20V 4.3A PPAK 1212

MOSFET 2P-CH 20V 4.3A PPAK 1212

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 098516-SI7901EDN-T1-E3 SI7901EDN-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7901EDN-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 1300 milliwatts
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