N-CH MOSFET 150V 3A 85mR SOIC SMT Product overview: SI7898DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 3A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7898DP-T1-GE3
MOSFET N-CH 150V 3A PPAK SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028688-SI7898DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7898DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): HUF75831SK8T_NL; HUFA75831SK8T; HUFA75831SK8;
Introduction Date: June 13, 2002
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
MOSFET, N CHANNEL, 150V, 3A, PPAK SO8; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 150V, 3A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 150V 3A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-SI7898DP-T1-GE3 | SI7898DP-T1-GE3 | SI7898DP-T1-GE3DKR-ND | 028688-SI7898DP-T1-GE3 | SI7898DP-T1-GE3 | 72R4251 | SI7898DP-T1-GE3 |
| Product Name | 150V 3A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-GE3 | MOSFET | Mosfet, N Channel, 150V, 3A, Ppak So8; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
