Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65
Manufacturer: Vishay
Win Source Part Number: 028687-SI7898DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 150V 3A PPAK SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET N-CH 150V 3A PPAK SO-8
N CHANNEL MOSFET, 150V, 4.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
| RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1807862 | 028687-SI7898DP-T1-E3 | SI7898DP-T1-E3 | SI7898DP-T1-E3DKR-ND | SI7898DP-T1-E3 | 06J8174 | SI7898DP-T1-E3 |
| Product Name | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 150V, 4.8A, Soic; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
