Vishay Precision Group Single FETs, MOSFETs SI7898DP-T1-E3

Description
MOSFET N-CH 150V 3A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 150V 3A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7898DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7898DP-T1-E3
Single FETs, MOSFETs SI7898DP-T1-E3
MOSFET N-CH 150V 3A PPAK SO-8

MOSFET N-CH 150V 3A PPAK SO-8

Supplier's Site Datasheet
Corby, Northants, United Kingdom
MOSFETs
1807862
MOSFETs 1807862
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65

Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1807322
MOSFETs 1807322
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65

Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1807862P
MOSFETs 1807862P
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65

Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65

Supplier's Site
Single FETs, MOSFETs - SI7898DP-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7898DP-T1-E3DKR-ND
Single FETs, MOSFETs SI7898DP-T1-E3DKR-ND
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7898DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7898DP-T1-E3TR-ND
Single FETs, MOSFETs SI7898DP-T1-E3TR-ND
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7898DP-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7898DP-T1-E3CT-ND
Single FETs, MOSFETs SI7898DP-T1-E3CT-ND
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-E3 - 028687-SI7898DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-E3
028687-SI7898DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-E3 028687-SI7898DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 028687-SI7898DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 028687-SI7898DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 150V Vds 20V Vgs PowerPAK SO-8

MOSFET 150V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7898DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7898DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7898DP-T1-E3
MOSFET N-CH 150V 3A PPAK SO-8

MOSFET N-CH 150V 3A PPAK SO-8

Supplier's Site
N Channel Mosfet, 150V, 4.8A, Soic; Channel Type Vishay - 06J8174 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 4.8A, Soic; Channel Type Vishay
06J8174
N Channel Mosfet, 150V, 4.8A, Soic; Channel Type Vishay 06J8174
N CHANNEL MOSFET, 150V, 4.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 4.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) RS Components, Ltd. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7898DP-T1-E3 1807862 SI7898DP-T1-E3DKR-ND 028687-SI7898DP-T1-E3 SI7898DP-T1-E3 SI7898DP-T1-E3 06J8174
Product Name Single FETs, MOSFETs MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-E3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 150V, 4.8A, Soic; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts 150 volts
IDSS 3000 milliamps 4800 milliamps
Unlock Full Specs
to access all available technical data