N-CH MOSFET 150V 3A 85mR SOIC Surface Mount Product overview: SI7898DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 3A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7898DP-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65
Pb- Free N-Ch PowerPAK SO-8 BWL 150V 65
Manufacturer: Vishay
Win Source Part Number: 028687-SI7898DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
N CHANNEL MOSFET, 150V, 4.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 150V 3A PPAK SO-8
MOSFET N-CH 150V 3A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7898DP-T1-E3 | SI7898DP-T1-E3DKR-ND | 1807862P | 028687-SI7898DP-T1-E3 | SI7898DP-T1-E3 | 06J8174 | SI7898DP-T1-E3 | SI7898DP-T1-E3 |
| Product Name | SMD 150V 3A SOIC MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7898DP-T1-E3 | MOSFET | N Channel Mosfet, 150V, 4.8A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 |
