Vishay Intertechnology, Inc. MOSFET SI7894ADP-T1-GE3

Description
MOSFET 30V 25A 5.4W 3.6mohm @ 10V
Description
MOSFET 30V 25A 5.4W 3.6mohm @ 10V
Datasheet
Datasheet Summary
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N-Channel 30-V MOSFET in a PowerPAK SO-8 package with a 1.07 mm profile, optimized for synchronous rectifier applications. It has a maximum drain-source voltage of 30 V, continuous drain current of 25 A at 25 °C, and a drain-source on-state resistance of 0.0036 Ω at V_GS = 10 V and 0.0045 Ω at V_GS = 4.5 V. The device meets IEC 61249-2-21 halogen-free requirements and is rated for a junction temperature range of -55 °C to 150 °C.

Datasheet Summary
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N-Channel 30-V MOSFET in a PowerPAK SO-8 package with a 1.07 mm profile, optimized for synchronous rectifier applications. It has a maximum drain-source voltage of 30 V, continuous drain current of 25 A at 25 °C, and a drain-source on-state resistance of 0.0036 Ω at V_GS = 10 V and 0.0045 Ω at V_GS = 4.5 V. The device meets IEC 61249-2-21 halogen-free requirements and is rated for a junction temperature range of -55 °C to 150 °C.

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MOSFET 30V 25A 5.4W 3.6mohm @ 10V

MOSFET 30V 25A 5.4W 3.6mohm @ 10V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7894ADP-T1-GE3
Product Name MOSFET
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