Vishay Intertechnology, Inc. MOSFET SI7894ADP-T1-GE3

N-Channel 30-V MOSFET in a PowerPAK SO-8 package with a 1.07 mm profile, optimized for synchronous rectifier applications. It has a maximum drain-source voltage of 30 V, continuous drain current of 25 A at 25 °C, and a drain-source on-state resistance of 0.0036 Ω at V_GS = 10 V and 0.0045 Ω at V_GS = 4.5 V. The device meets IEC 61249-2-21 halogen-free requirements and is rated for a junction temperature range of -55 °C to 150 °C.