Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7894ADP-T1-E3 SI7894ADP-T1-E3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092944-SI7894ADP-T1 -E3 Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.9 W Number of Pins: 8 Rise Time: 15 ns Fall Time: 15 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 22 ns Continuous Drain Current (ID): 17 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 190 ns Drain to Source Resistance: 3.6 mΩ Gate to Source Voltage (Vgs): 12 V