Vishay Precision Group Single FETs, MOSFETs SI7884BDP-T1-GE3

Description
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7884BDP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7884BDP-T1-GE3CT-ND
Single FETs, MOSFETs SI7884BDP-T1-GE3CT-ND
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7884BDP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7884BDP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7884BDP-T1-GE3DKR-ND
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7884BDP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7884BDP-T1-GE3TR-ND
Single FETs, MOSFETs SI7884BDP-T1-GE3TR-ND
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7884BDP-T1-GE3 - 028682-SI7884BDP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7884BDP-T1-GE3
028682-SI7884BDP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7884BDP-T1-GE3 028682-SI7884BDP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028682-SI7884BDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Family Name: Si7884BDP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 77nC @ 10V Max Input Capacitance: 3540pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): SI7884BDP-T1-E3; BSC093N04LSGXT; TPCA8052-H; TPCA8052-H(T2L1,VM; Introduction Date: April 17, 2008 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 028682-SI7884BDP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Family Name: Si7884BDP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 3540pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): SI7884BDP-T1-E3; BSC093N04LSGXT; TPCA8052-H; TPCA8052-H(T2L1,VM;
Introduction Date: April 17, 2008
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
Singapore
N-Channel 40V 18.5A MOSFET Transistor
278-SI7884BDP-T1-GE3
N-Channel 40V 18.5A MOSFET Transistor 278-SI7884BDP-T1-GE3
N-Channel Power MOSFET, 40V, 18.5A, 7.5mR, Si, PowerPAK Product overview: SI7884BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7884BDP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 40V, 18.5A, 7.5mR, Si, PowerPAK Product overview: SI7884BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7884BDP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7884BDP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7884BDP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7884BDP-T1-GE3
MOSFET N-CH 40V 58A PPAK SO-8

MOSFET N-CH 40V 58A PPAK SO-8

Supplier's Site
Single FETs, MOSFETs - SI7884BDP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7884BDP-T1-GE3
Single FETs, MOSFETs SI7884BDP-T1-GE3
MOSFET N-CH 40V 58A PPAK SO-8

MOSFET N-CH 40V 58A PPAK SO-8

Supplier's Site Datasheet
MOSFET 40V 58A 46W 7.5mohm @ 10V

MOSFET 40V 58A 46W 7.5mohm @ 10V

Buy Now Datasheet
N Channel Mosfet, 40V, 58A, Soic; Channel Type Vishay - 16P3877 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 58A, Soic; Channel Type Vishay
16P3877
N Channel Mosfet, 40V, 58A, Soic; Channel Type Vishay 16P3877
N CHANNEL MOSFET, 40V, 58A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 58A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 40V, 58A, Powerpak So-8, Full Reel; Channel Type Vishay - 29X0551 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 58A, Powerpak So-8, Full Reel; Channel Type Vishay
29X0551
Mosfet, N Channel, 40V, 58A, Powerpak So-8, Full Reel; Channel Type Vishay 29X0551
MOSFET, N CHANNEL, 40V, 58A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:46W RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 58A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:46W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7884BDP-T1-GE3CT-ND 028682-SI7884BDP-T1-GE3 278-SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 16P3877 29X0551
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7884BDP-T1-GE3 N-Channel 40V 18.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET N Channel Mosfet, 40V, 58A, Soic; Channel Type Vishay Mosfet, N Channel, 40V, 58A, Powerpak So-8, Full Reel; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAKR SO-8 SO-8; PowerPAK® SO-8 TO-3 TO-3; SO-8
V(BR)DSS 40 volts 40 volts
PD 4600 to 46000 milliwatts 46000 milliwatts 4600 milliwatts 46000 milliwatts
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