N-Channel MOSFET | 40V | 18.5A | 7.5mR | PowerPAK Product overview: SI7884BDP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7884BDP-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028683-SI7884BDP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Family Name: Si7884BDP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 3540pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): SiR422DP-T1-GE3; SI7884BDP-T1-GE3; BSC093N04LSGXT; TPCA8052-H;
Introduction Date: April 17, 2008
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET N-CH 40V 58A PPAK SO-8
MOSFET, N CHANNEL, 40V, 58A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N CHANNEL, 40V, 58A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:46W RoHS Compliant: Yes
MOSFET N-CH 40V 58A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7884BDP-T1-E3 | SI7884BDP-T1-E3TR-ND | 028683-SI7884BDP-T1-E3 | SI7884BDP-T1-E3 | 05W6955 | 75M5569 | SI7884BDP-T1-E3 |
| Product Name | N-Channel 40V 18.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7884BDP-T1-E3 | Single FETs, MOSFETs | Mosfet, N Channel, 40V, 58A, Powerpak So-8; Channel Type Vishay | Mosfet, N Channel, 40V, 58A, Powerpak So-8, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| PD | 46000 milliwatts | 4600 to 46000 milliwatts | 4600 milliwatts | 46000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | TO-3; SO-8 | TO-3; SO-8 | SO-8; PowerPAKR SO-8 |
