Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7884BDP-T1-BE3

N-Channel 40-V (D-S) MOSFET in a PowerPAK SO-8 package, measuring 6.15 mm by 5.15 mm, with a drain-source on-state resistance of 0.0075 Ω at 10 V gate-source voltage and 0.009 Ω at 4.5 V gate-source voltage, rated for a continuous drain current of 58 A at TC = 25 °C and a maximum junction temperature of 150 °C. The device is RoHS compliant and features a typical total gate charge of 21 nC. It is suitable for synchronous rectifier applications and has been tested for Rg and UIS.