Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7882DP SI7882DP

Description
Manufacturer: Vishay Win Source Part Number: 322868-SI7882DP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 30nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7882DP - 322868-SI7882DP - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: Vishay Win Source Part Number: 322868-SI7882DP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 30nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7882DP - 322868-SI7882DP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7882DP
322868-SI7882DP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7882DP 322868-SI7882DP
Manufacturer: Vishay Win Source Part Number: 322868-SI7882DP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 30nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 322868-SI7882DP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 30nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 322868-SI7882DP
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7882DP
Polarity N-Channel; N-Channel
V(BR)DSS 12 volts
PD 1900 milliwatts
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