Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7882DP-T1-GE3

Description
N-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7882DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7882DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7882DP-T1-GE3TR-ND
N-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7882DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7882DP-T1-GE3
Single FETs, MOSFETs SI7882DP-T1-GE3
MOSFET N-CH 12V 13A PPAK SO-8

MOSFET N-CH 12V 13A PPAK SO-8

Supplier's Site Datasheet
FETs - Single - SI7882DP-T1-GE3 - 805502-SI7882DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI7882DP-T1-GE3
805502-SI7882DP-T1-GE3
FETs - Single - SI7882DP-T1-GE3 805502-SI7882DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 805502-SI7882DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 12V Part Status: Obsolete (End Of Life) Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 1.9W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 5.5mOhm at 17A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 30nC at 4.5V Current - Continuous Drain (Id) at 25°C: 13A Vgs(th) (Maximum) at Id: 1.4V at 250μA Maximum Vgs: ±8V

Manufacturer: Vishay Siliconix
Win Source Part Number: 805502-SI7882DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12V
Part Status: Obsolete (End Of Life)
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 1.9W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 5.5mOhm at 17A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 4.5V
Current - Continuous Drain (Id) at 25°C: 13A
Vgs(th) (Maximum) at Id: 1.4V at 250μA
Maximum Vgs: ±8V

Buy Now
Singapore
12V 13A MOSFET Transistor
278-SI7882DP-T1-GE3
12V 13A MOSFET Transistor 278-SI7882DP-T1-GE3
MOSFET N-CH 12V 13A PPAK SO-8 Product overview: SI7882DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7882DP-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 12V 13A PPAK SO-8 Product overview: SI7882DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7882DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V - 880-SI7882DP-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V
880-SI7882DP-T1-GE3
MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V 880-SI7882DP-T1-GE3
MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V

MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7882DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7882DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7882DP-T1-GE3
MOSFET N-CH 12V 13A PPAK SO-8

MOSFET N-CH 12V 13A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7882DP-T1-GE3TR-ND SI7882DP-T1-GE3 805502-SI7882DP-T1-GE3 278-SI7882DP-T1-GE3 880-SI7882DP-T1-GE3 SI7882DP-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - SI7882DP-T1-GE3 12V 13A MOSFET Transistor MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 SO-8; SOT3 Tape & Reel (TR) SO-8; PowerPAKR SO-8
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 12 volts 12 volts
IDSS 13000 milliamps
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