The SI7880ADP-T1-GE3 is an N-Channel MOSFET designed for applications requiring efficient power management. It operates with a maximum drain-source voltage (V_DS) of 30 V and can handle continuous drain currents up to 40 A at a case temperature of 25 ¬8C. The device features a low on-resistance of 0.003 Oc at a gate-source voltage (V_GS) of 10 V, making it suitable for high-efficiency switching applications. This MOSFET is housed in a PowerPAK SO-8 package, which offers a low thermal resistance and a compact footprint, ideal for space-constrained designs. The device is optimized for pulse width modulation (PWM) applications and is 100% R_g tested, ensuring reliable performance in various operating conditions. It has a wide operating temperature range from -55 ¬8C to +150 ¬8C, enhancing its versatility in different environments. The SI7880ADP-T1-GE3 is particularly suitable for use in DC/DC converters and as a low-side MOSFET in synchronous buck converters, making it a valuable component for engineers looking to improve power efficiency in their designs.
N-Channel 30V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 894813-SI7880ADP-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI7880
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
TRANSISTOR 31 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Product overview: SI7880ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 31 A, 30 V, 0.004 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 31 A, 30 V, 0.004 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7880ADP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
MOSFET 30V 40A 83W 3.0mohm @ 10V
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7880ADP-T1-GE3-ND | 894813-SI7880ADP-T1-GE3 | 278-SI7880ADP-T1-GE3 | SI7880ADP-T1-GE3 | SI7880ADP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7880ADP-T1-GE3 | N-Channel 31 A 30 V 0.004 ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel |
