Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7872DP-T1-E3 SI7872DP-T1-E3

Manufacturer: Vishay
Win Source Part Number: 097601-SI7872DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual

2 N-CH MOSFET 30V 6.4A 22mR SOIC Product overview: SI7872DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.4A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7872DP-T1-E3 can be used for catalog matching and distributor lookup.