Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7872DP-T1-E3

Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - SI7872DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7872DP-T1-E3TR-ND
FET, MOSFET Arrays SI7872DP-T1-E3TR-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7872DP-T1-E3 - 097601-SI7872DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7872DP-T1-E3
097601-SI7872DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7872DP-T1-E3 097601-SI7872DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 097601-SI7872DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.4A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11nC @ 4.5V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 097601-SI7872DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7872DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7872DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7872DP-T1-E3
MOSFET 2N-CH 30V 6.4A PPAK SO8

MOSFET 2N-CH 30V 6.4A PPAK SO8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7872DP-T1-E3TR-ND 097601-SI7872DP-T1-E3 SI7872DP-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7872DP-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SO-8; PowerPAK® SO-8 Dual SO-8; SOT3; PowerPAK SO-8 Dual
Polarity N-Channel
V(BR)DSS 30 volts
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