Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7862ADP-T1-GE3 SI7862ADP-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794325-SI7862ADP-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Family Name: Si7862ADP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 16V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 7340pF @ 8V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 3 mOhm @ 29A, 4.5V Introduction Date: November 04, 2004 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7862ADP-T1-GE3 - 794325-SI7862ADP-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SI7862ADP-T1-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7862ADP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794325-SI7862ADP-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Family Name: Si7862ADP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 16V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 7340pF @ 8V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 3 mOhm @ 29A, 4.5V Introduction Date: November 04, 2004 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7862ADP-T1-GE3 - 794325-SI7862ADP-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7862ADP-T1-GE3
794325-SI7862ADP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7862ADP-T1-GE3 794325-SI7862ADP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 794325-SI7862ADP-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Family Name: Si7862ADP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 16V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 7340pF @ 8V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 3 mOhm @ 29A, 4.5V Introduction Date: November 04, 2004 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay Siliconix
Win Source Part Number: 794325-SI7862ADP-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Family Name: Si7862ADP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 16V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 7340pF @ 8V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 3 mOhm @ 29A, 4.5V
Introduction Date: November 04, 2004
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

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Single FETs, MOSFETs - SI7862ADP-T1-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7862ADP-T1-GE3-ND
Single FETs, MOSFETs SI7862ADP-T1-GE3-ND
N-Channel 16V 18A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 16V 18A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SI7862ADP-T1-GE3
MOSFET SI7862ADP-T1-GE3
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V

MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7862ADP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7862ADP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7862ADP-T1-GE3
MOSFET N-CH 16V 18A PPAK SO-8

MOSFET N-CH 16V 18A PPAK SO-8

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Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 794325-SI7862ADP-T1-GE3 SI7862ADP-T1-GE3-ND SI7862ADP-T1-GE3 SI7862ADP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7862ADP-T1-GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 1900 milliwatts
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