Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-GE3 SI7858ADP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064579-SI7858ADP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 80nC @ 4.5V Max Input Capacitance: 5700pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.6 mOhm @ 29A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 064579-SI7858ADP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 80nC @ 4.5V Max Input Capacitance: 5700pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.6 mOhm @ 29A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-GE3 - 064579-SI7858ADP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-GE3
064579-SI7858ADP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-GE3 064579-SI7858ADP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064579-SI7858ADP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 80nC @ 4.5V Max Input Capacitance: 5700pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.6 mOhm @ 29A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064579-SI7858ADP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 80nC @ 4.5V
Max Input Capacitance: 5700pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 29A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7858ADP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7858ADP-T1-GE3
Single FETs, MOSFETs SI7858ADP-T1-GE3
MOSFET N-CH 12V 20A PPAK SO-8

MOSFET N-CH 12V 20A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7858ADP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7858ADP-T1-GE3TR-ND
Single FETs, MOSFETs SI7858ADP-T1-GE3TR-ND
N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
12V 20A MOSFET Transistor
278-SI7858ADP-T1-GE3
12V 20A MOSFET Transistor 278-SI7858ADP-T1-GE3
12V 20A N-CH MOSFET, 2.6mR Rds On, PPAK SO-8 Product overview: SI7858ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858ADP-T1-GE3 can be used for catalog matching and distributor lookup.

12V 20A N-CH MOSFET, 2.6mR Rds On, PPAK SO-8 Product overview: SI7858ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858ADP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7858ADP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7858ADP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7858ADP-T1-GE3
MOSFET N-CH 12V 20A PPAK SO-8

MOSFET N-CH 12V 20A PPAK SO-8

Supplier's Site
N Channel Mosfet, 12V, 20A; Channel Type Vishay - 26R1939 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 12V, 20A; Channel Type Vishay
26R1939
N Channel Mosfet, 12V, 20A; Channel Type Vishay 26R1939
N CHANNEL MOSFET, 12V, 20A; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 12V, 20A; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Product Range:-RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 12V, 20A, Full Reel; Channel Type Vishay - 33P5434 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 12V, 20A, Full Reel; Channel Type Vishay
33P5434
N Channel Mosfet, 12V, 20A, Full Reel; Channel Type Vishay 33P5434
N CHANNEL MOSFET, 12V, 20A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes

N CHANNEL MOSFET, 12V, 20A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V

MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 064579-SI7858ADP-T1-GE3 SI7858ADP-T1-GE3 SI7858ADP-T1-GE3TR-ND 278-SI7858ADP-T1-GE3 SI7858ADP-T1-GE3 26R1939 SI7858ADP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs 12V 20A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 12V, 20A; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 12 volts 12 volts
PD 1900 milliwatts 1900 milliwatts 1900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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