Manufacturer: Vishay
Win Source Part Number: 064579-SI7858ADP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 80nC @ 4.5V
Max Input Capacitance: 5700pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 29A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
12V 20A N-CH MOSFET, 2.6mR Rds On, PPAK SO-8 Product overview: SI7858ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858ADP-T1-GE3
N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET N-CH 12V 20A PPAK SO-8
N CHANNEL MOSFET, 12V, 20A; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV; Product Range:-RoHS Compliant: Yes
N CHANNEL MOSFET, 12V, 20A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:950mV RoHS Compliant: Yes
MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V
MOSFET N-CH 12V 20A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 064579-SI7858ADP-T1-GE3 | 278-SI7858ADP-T1-GE3 | SI7858ADP-T1-GE3TR-ND | SI7858ADP-T1-GE3 | 26R1939 | SI7858ADP-T1-GE3 | SI7858ADP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-GE3 | 12V 20A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 12V, 20A; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 12 volts | 12 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
