N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel Power MOSFET, 12V, 20A, 2.6mR RdsOn Product overview: SI7858ADP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858ADP-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028676-SI7858ADP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 80nC @ 4.5V
Max Input Capacitance: 5700pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 29A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 12V 20A PPAK SO-8
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:5.4W RoHS Compliant: Yes
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:5.4W RoHS Compliant: Yes
MOSFET N-CH 12V 20A PPAK SO-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7858ADP-T1-E3TR-ND | 278-SI7858ADP-T1-E3 | 028676-SI7858ADP-T1-E3 | SI7858ADP-T1-E3 | SI7858ADP-T1-E3 | 64J7429 | 64J7430 | SI7858ADP-T1-E3 |
| Product Name | Single FETs, MOSFETs | N-Channel 12V 20A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858ADP-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Ch Mosfet; Channel Type Vishay | N Channel Mosfet; Channel Type Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | TO-3 | SO-8; PowerPAK® SO-8 | ||
| PD | 1900 milliwatts | 1900 milliwatts | 5400 milliwatts | 5400 milliwatts | 1900 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
