60V 6.2A N-CH MOSFET 22mR SOIC SMT Product overview: SI7850DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7850DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028673-SI7850DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Family Name: Si7850DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 10.3A, 10V
Alternative Parts (Cross-Reference): TSM300NB06CR RLG; TSM280NB06LCR RLG; DMT6015LPS-13; TSM220NB06CR RLG;
Introduction Date: May 23, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 60V 6.2A PPAK SO-8
N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
MOSFET N-CH 60V 6.2A PPAK SO-8
MOSFET, N-CH, 60V, 6.2A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 10.3A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7850DP-T1-GE3 | 028673-SI7850DP-T1-GE3 | SI7850DP-T1-GE3 | SI7850DP-T1-GE3DKR-ND | SI7850DP-T1-GE3 | 01AC5008 | 16P3874 |
| Product Name | 60V 6.2A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7850DP-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 6.2A, Powerpak So; Transistor Polarity Vishay | N Channel Mosfet, 60V, 10.3A, Soic, Full Reel; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | TO-3 |
