60V 6.2A N-CH MOSFET, 22mR Rds On, SOIC Product overview: SI7850DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7850DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-Ch 60V 6.2A PowerPAK SO8
N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028672-SI7850DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Family Name: Si7850DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 10.3A, 10V
Alternative Parts (Cross-Reference): TSM280NB06LCR RLG; STL8N6LF6AG; TSM230N06PQ56 RLG;
Introduction Date: May 23, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET Transistor, N Channel, 10.3 A, 60 V, 22 mohm, 10 V, 3 V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 10.3A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.8W RoHS Compliant: Yes
MOSFET N-CH 60V 6.2A PPAK SO-8
MOSFET N-CH 60V 6.2A PPAK SO-8
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.018Ohm;ID 6.2A;PowerPAK SO-8;PD 1.8W;-55de
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7850DP-T1-E3 | 7104764 | 7104764P | SI7850DP-T1-E3CT-ND | 028672-SI7850DP-T1-E3 | 61M9830 | 71T8057 | SI7850DP-T1-E3 | SI7850DP-T1-E3 | SI7850DP-T1-E3 | 70026127 |
| Product Name | 60V 6.2A SOIC MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7850DP-T1-E3 | Mosfet Transistor, N Channel, 10.3 A, 60 V, 22 Mohm, 10 V, 3 V Rohs Compliant Vishay | N Channel Mosfet, 60V, 10.3A, Soic-8, Full Reel; Channel Type Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.018Ohm;ID 6.2A;PowerPAK SO-8;PD 1.8W;-55de |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| MOSFET Operating Mode | Enhancement | ||||||||||
| Package Type | Powerpak so | SO-8; SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | TO-3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | PowerPAK SO-8 |
