N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
40V 47A 9mR N-CH MOSFET SOIC Product overview: SI7848BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 47A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 47A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7848BDP-T1-GE3
MOSFET N-CH 40V 47A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 042624-SI7848BDP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2000pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N CHANNEL MOSFET, 40V, 47A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 40V 47A PPAK SO-8
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7848BDP-T1-GE3CT-ND | 278-SI7848BDP-T1-GE3 | SI7848BDP-T1-GE3 | 042624-SI7848BDP-T1-GE3 | 16P3873 | SI7848BDP-T1-GE3 | SI7848BDP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 40V 47A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7848BDP-T1-GE3 | N Channel Mosfet, 40V, 47A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | ||
| PD | 36000 milliwatts | 4200 milliwatts | 4200 to 36000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
