Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7846DP-T1-GE3 SI7846DP-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 064577-SI7846DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7846DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): TSM650N15CR RLG; FDMS86252; FDMS2572-F095; FDMS2572;
Introduction Date: April 09, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

MOSFET N-CH 150V 4A PPAK SO-8 Product overview: SI7846DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7846DP-T1-GE3 can be used for catalog matching and distributor lookup.