Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7844DP-T1-E3

Description
MOSFET 2N-CH 30V 6.4A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 6.4A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI7844DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7844DP-T1-E3
FET, MOSFET Arrays SI7844DP-T1-E3
MOSFET 2N-CH 30V 6.4A PPAK SO-8

MOSFET 2N-CH 30V 6.4A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7844DP-T1-E3 - 104033-SI7844DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7844DP-T1-E3
104033-SI7844DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7844DP-T1-E3 104033-SI7844DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 104033-SI7844DP-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7844DP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.4A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): Si7270DP-T1-GE3; Si7272DP-T1-GE3; TPC8216-H; AO4842; Introduction Date: March 03, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 104033-SI7844DP-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7844DP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): Si7270DP-T1-GE3; Si7272DP-T1-GE3; TPC8216-H; AO4842;
Introduction Date: March 03, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 6.4A MOSFET Transistor
289-SI7844DP-T1-E3
30V 6.4A MOSFET Transistor 289-SI7844DP-T1-E3
MOSFET 2N-CH 30V 6.4A PPAK SO-8 Product overview: SI7844DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7844DP-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 6.4A PPAK SO-8 Product overview: SI7844DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7844DP-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7844DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7844DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7844DP-T1-E3
MOSFET 2N-CH 30V 6.4A PPAK SO-8

MOSFET 2N-CH 30V 6.4A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7844DP-T1-E3 104033-SI7844DP-T1-E3 289-SI7844DP-T1-E3 SI7844DP-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7844DP-T1-E3 30V 6.4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 6400 milliamps
Unlock Full Specs
to access all available technical data