Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7842DP-T1-E3 SI7842DP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 125829-SI7842DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7842DP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): SiR770DP-T1-GE3; STL40DN3LLH5; BSC150N03LDGXT; BSC150N03LD G; Introduction Date: May 22, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 125829-SI7842DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7842DP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): SiR770DP-T1-GE3; STL40DN3LLH5; BSC150N03LDGXT; BSC150N03LD G; Introduction Date: May 22, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7842DP-T1-E3 - 125829-SI7842DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7842DP-T1-E3
125829-SI7842DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7842DP-T1-E3 125829-SI7842DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 125829-SI7842DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si7842DP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.3A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): SiR770DP-T1-GE3; STL40DN3LLH5; BSC150N03LDGXT; BSC150N03LD G; Introduction Date: May 22, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 125829-SI7842DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7842DP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): SiR770DP-T1-GE3; STL40DN3LLH5; BSC150N03LDGXT; BSC150N03LD G;
Introduction Date: May 22, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI7842DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7842DP-T1-E3
FET, MOSFET Arrays SI7842DP-T1-E3
MOSFET 2N-CH 30V 6.3A PPAK SO-8

MOSFET 2N-CH 30V 6.3A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7842DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7842DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7842DP-T1-E3
MOSFET 2N-CH 30V 6.3A PPAK SO8

MOSFET 2N-CH 30V 6.3A PPAK SO8

Supplier's Site
Mosfet, Dual N Channel, 30V, 6.3A, Powerpakso; Transistor Polarity Vishay - 18X0026 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 30V, 6.3A, Powerpakso; Transistor Polarity Vishay
18X0026
Mosfet, Dual N Channel, 30V, 6.3A, Powerpakso; Transistor Polarity Vishay 18X0026
MOSFET, DUAL N CHANNEL, 30V, 6.3A, POWERPAKSO; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 30V, 6.3A, POWERPAKSO; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 125829-SI7842DP-T1-E3 SI7842DP-T1-E3 SI7842DP-T1-E3 18X0026
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7842DP-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N Channel, 30V, 6.3A, Powerpakso; Transistor Polarity Vishay
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 30 volts 30 volts
PD 1400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 Dual SO-8; PowerPAK® SO-8 Dual TO-3
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