MOSFET 2N-CH 30V 6.3A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 125829-SI7842DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si7842DP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): SiR770DP-T1-GE3; STL40DN3LLH5; BSC150N03LDGXT; BSC150N03LD G;
Introduction Date: May 22, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
30V 6.3A N-CH MOSFET SOIC 22mR Surface Mount Product overview: SI7842DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 6.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 6.3A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7842DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 6.3A PPAK SO8
MOSFET, DUAL N CHANNEL, 30V, 6.3A, POWERPAKSO; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7842DP-T1-E3 | 125829-SI7842DP-T1-E3 | 278-SI7842DP-T1-E3 | SI7842DP-T1-E3 | 18X0026 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7842DP-T1-E3 | SMD 30V 6.3A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Channel, 30V, 6.3A, Powerpakso; Transistor Polarity Vishay |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | 30 volts | |||
| IDSS | 6300 milliamps | 6300 milliamps | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
