Vishay Intertechnology, Inc. 30V 16.5A 4.1W MOSFET Transistor SI7840BDP-T1-GE3

MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V Product overview: SI7840BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16.5A, 4.1W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16.5A, 4.1W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7840BDP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Manufacturer: Vishay Siliconix
Win Source Part Number: 794323-SI7840BDP-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Family Name: Si7840BDP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 21nC @ 4.5V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta)
Rds On (Maximum) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V
Alternative Parts (Cross-Reference): STL60NH3LL; AON6520; AON6424; FDMS8880;
Introduction Date: December 02, 2005
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance