Vishay Precision Group 200V 1.7A MOSFET Transistor SI7820DN-T1-GE3

Description
200V 1.7A N-CH MOSFET, 240mR Rds On, PowerPAK 1212 Product overview: SI7820DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7820DN-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
200V 1.7A N-CH MOSFET, 240mR Rds On, PowerPAK 1212 Product overview: SI7820DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7820DN-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
200V 1.7A MOSFET Transistor
278-SI7820DN-T1-GE3
200V 1.7A MOSFET Transistor 278-SI7820DN-T1-GE3
200V 1.7A N-CH MOSFET, 240mR Rds On, PowerPAK 1212 Product overview: SI7820DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7820DN-T1-GE3 can be used for catalog matching and distributor lookup.

200V 1.7A N-CH MOSFET, 240mR Rds On, PowerPAK 1212 Product overview: SI7820DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7820DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7820DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7820DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7820DN-T1-GE3DKR-ND
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

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Single FETs, MOSFETs - SI7820DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7820DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7820DN-T1-GE3TR-ND
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

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Single FETs, MOSFETs - SI7820DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7820DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7820DN-T1-GE3CT-ND
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

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Single FETs, MOSFETs - SI7820DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7820DN-T1-GE3
Single FETs, MOSFETs SI7820DN-T1-GE3
MOSFET N-CH 200V 1.7A PPAK1212-8

MOSFET N-CH 200V 1.7A PPAK1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7820DN-T1-GE3 - 028668-SI7820DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7820DN-T1-GE3
028668-SI7820DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7820DN-T1-GE3 028668-SI7820DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028668-SI7820DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 240 mOhm @ 2.6A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028668-SI7820DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7820DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7820DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7820DN-T1-GE3
MOSFET N-CH 200V 1.7A PPAK1212-8

MOSFET N-CH 200V 1.7A PPAK1212-8

Supplier's Site
N Channel Mosfet, 200V, 2.6A, Powerpak; Channel Type Vishay - 26R1937 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 2.6A, Powerpak; Channel Type Vishay
26R1937
N Channel Mosfet, 200V, 2.6A, Powerpak; Channel Type Vishay 26R1937
N CHANNEL MOSFET, 200V, 2.6A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 2.6A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V Vds 20V Vgs PowerPAK 1212-8

MOSFET 200V Vds 20V Vgs PowerPAK 1212-8

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI7820DN-T1-GE3 SI7820DN-T1-GE3DKR-ND SI7820DN-T1-GE3 028668-SI7820DN-T1-GE3 SI7820DN-T1-GE3 26R1937 SI7820DN-T1-GE3
Product Name 200V 1.7A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7820DN-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 200V, 2.6A, Powerpak; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type PowerPAK® 1212-8 PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAKR 1212-8 TO-3
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