200V 1.7A N-CH MOSFET, 240mR Rds On, PowerPAK 1212 Product overview: SI7820DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7820DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 200V 1.7A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 028668-SI7820DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 1.7A PPAK1212-8
N CHANNEL MOSFET, 200V, 2.6A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET 200V Vds 20V Vgs PowerPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7820DN-T1-GE3 | SI7820DN-T1-GE3DKR-ND | SI7820DN-T1-GE3 | 028668-SI7820DN-T1-GE3 | SI7820DN-T1-GE3 | 26R1937 | SI7820DN-T1-GE3 |
| Product Name | 200V 1.7A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7820DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 2.6A, Powerpak; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | TO-3 |
