MOSFET N-CH 200V 1.7A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 115053-SI7820DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET 200V Vds 20V Vgs PowerPAK 1212-8
MOSFET N-CH 200V 1.7A PPAK1212-8
MOSFET, N CHANNEL, 200V, 1.7A, POWERPAK-8; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
N CH MOSFET, 200V, 2.6A, POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7820DN-T1-E3 | 115053-SI7820DN-T1-E3 | SI7820DN-T1-E3CT-ND | SI7820DN-T1-E3 | SI7820DN-T1-E3 | 09X6453 | 57J5743 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7820DN-T1-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 200V, 1.7A, Powerpak-8; Channel Type Vishay | N Ch Mosfet, 200V, 2.6A, Powerpak, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| IDSS | 1700 milliamps | 1700 milliamps | 2600 milliamps |
