Manufacturer: Vishay
Win Source Part Number: 894808-SI7818DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 150 V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI7818
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7818DN-T1-GE3DKR, SI7818DN-T1-GE3TR, SI7818DNT1GE3, SI7818DN-T1-GE3CT
N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
150V 2.2A N-CH MOSFET, 135mR Rds On, PowerPAK Product overview: SI7818DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7818DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 2.2A PPAK1212-8
MOSFET N-CH 150V 2.2A PPAK1212-8
MOSFET 150V Vds 20V Vgs PowerPAK 1212-8
MOSFET 150V 3.4A 3.8W 135mohm @ 10V
N CHANNEL MOSFET, 150V, 3.4A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
N CH MOSFET, 150V, 3.4A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894808-SI7818DN-T1-GE3 | SI7818DN-T1-GE3CT-ND | 278-SI7818DN-T1-GE3 | SI7818DN-T1-GE3 | SI7818DN-T1-GE3 | SI7818DN-T1-GE3 | 880-SI7818DN-T1-GE3 | 26R1936 | 33P5430 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7818DN-T1-GE3 | Single FETs, MOSFETs | 150V 2.2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | MOSFET 150V 3.4A 3.8W 135mohm @ 10V | N Channel Mosfet, 150V, 3.4A, Powerpak; Channel Type Vishay | N Ch Mosfet, 150V, 3.4A, Powerpak; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAKR 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | |||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) |
