N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
150V 2.2A N-CH MOSFET, 135mR Rds(on), PowerPAK 1212 Product overview: SI7818DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7818DN-T1-E3 can be used for catalog matching and distributor lookup.
N-Ch PowerPAK® 1212-8 150V 135mohm @ 10V
N-Ch PowerPAK® 1212-8 150V 135mohm @ 10V
N-Ch PowerPAK® 1212-8 150V 135mohm @ 10V
Manufacturer: Vishay
Win Source Part Number: 028667-SI7818DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 135 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
MOSFET N-CH 150V 2.2A PPAK1212-8
N CHANNEL MOSFET, 150V, 3.4A, POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.5W RoHS Compliant: Yes
N CHANNEL MOSFET, 150V, 3.4A, POWERPAK 1212; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 150V 2.2A PPAK1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7818DN-T1-E3CT-ND | 278-SI7818DN-T1-E3 | 2567392 | 028667-SI7818DN-T1-E3 | SI7818DN-T1-E3 | 51K7000 | 85W3225 | SI7818DN-T1-E3 |
| Product Name | Single FETs, MOSFETs | 150V 2.2A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7818DN-T1-E3 | Single FETs, MOSFETs | N Channel Mosfet, 150V, 3.4A, Powerpak, Full Reel; Channel Type Vishay | N Channel Mosfet, 150V, 3.4A, Powerpak 1212; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | PowerPAK® 1212-8 | PowerPAK 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 | |
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
