Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7810DN-T1-GE3

N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R Product overview: SI7810DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7810DN-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 794322-SI7810DN-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Family Name: SI7810DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs: 62 mOhm @ 5.4A, 10V
Alternative Parts (Cross-Reference): FDMC3612; IRFHM3911TRPBF; FDMC86106LZ; DMN10H099SFG-7;
Introduction Date: August 26, 2001
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited