Manufacturer: Vishay
Win Source Part Number: 028666-SI7810DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 62 mOhm @ 5.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 3.4A PPAK1212-8
N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R Product overview: SI7810DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7810DN-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 3.4A;PowerPAK 1212-8;PD 1.5W
MOSFET N-CH 100V 3.4A PPAK1212-8
N CHANNEL MOSFET, 100V, 3.4A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028666-SI7810DN-T1-E3 | SI7810DN-T1-E3 | SI7810DN-T1-E3CT-ND | 278-SI7810DN-T1-E3 | SI7810DN-T1-E3 | 70026075 | SI7810DN-T1-E3 | 06J8165 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7810DN-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 3.4A MOSFET Transistor | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 3.4A;PowerPAK 1212-8;PD 1.5W | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 100V, 3.4A, Powerpak; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 1500 milliwatts | 1500 milliwatts | 3.8 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | Tape and Reel | PowerPAK 1212-8 | PowerPAKR 1212-8 | TO-3 |
