N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 1096194-SI7772DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 1084pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
N CHANNEL MOSFET, 30V, 35.6A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 35.6A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET N-CH 30V 35.6A PPAK SO-8
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7772DP-T1-GE3CT-ND | 1096194-SI7772DP-T1-GE3 | SI7772DP-T1-GE3 | 35R0086 | SI7772DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7772DP-T1-GE3 | MOSFET | N Channel Mosfet, 30V, 35.6A; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | |
| V(BR)DSS | 30 volts | ||||
| PD | 3900 to 29800 milliwatts |
