Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7742DP-T1-GE3

Description
N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7742DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7742DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7742DP-T1-GE3TR-ND
N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
30V 29A SOIC MOSFET Transistor
278-SI7742DP-T1-GE3
30V 29A SOIC MOSFET Transistor 278-SI7742DP-T1-GE3
30V 29A N-CH MOSFET SOIC 3.5mR RdsOn Product overview: SI7742DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 29A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 29A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7742DP-T1-GE3 can be used for catalog matching and distributor lookup.

30V 29A N-CH MOSFET SOIC 3.5mR RdsOn Product overview: SI7742DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 29A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 29A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7742DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7742DP-T1-GE3 - 122263-SI7742DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7742DP-T1-GE3
122263-SI7742DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7742DP-T1-GE3 122263-SI7742DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 122263-SI7742DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.7V @ 250μA Max Gate Charge: 115nC @ 10V Max Input Capacitance: 5300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 122263-SI7742DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 5300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7742DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7742DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7742DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8

MOSFET N-CH 30V 60A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 60A 83W 3.5mohm @ 10V

MOSFET 30V 60A 83W 3.5mohm @ 10V

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7742DP-T1-GE3TR-ND 278-SI7742DP-T1-GE3 122263-SI7742DP-T1-GE3 SI7742DP-T1-GE3 SI7742DP-T1-GE3
Product Name Single FETs, MOSFETs 30V 29A SOIC MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7742DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAKR SO-8
PD 83000 milliwatts 5400 to 83000 milliwatts
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