Vishay Intertechnology, Inc. 150V 7.7A MOSFET Transistor SI7738DP-T1-E3

150V 7.7A 38mR N-CH MOSFET, PPAK 8SOIC Product overview: SI7738DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7738DP-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 150V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 150V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 150V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

MOSFET N-CH 150V 30A PPAK SO-8

Manufacturer: Vishay
Win Source Part Number: 1096193-SI7738DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2100pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 7.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance