Vishay Precision Group Single FETs, MOSFETs SI7716ADN-T1-GE3

Description
MOSFET N-CH 30V 16A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET N-CH 30V 16A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7716ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7716ADN-T1-GE3
Single FETs, MOSFETs SI7716ADN-T1-GE3
MOSFET N-CH 30V 16A PPAK1212-8

MOSFET N-CH 30V 16A PPAK1212-8

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7716ADN-T1-GE3 - 028663-SI7716ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7716ADN-T1-GE3
028663-SI7716ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7716ADN-T1-GE3 028663-SI7716ADN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028663-SI7716ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 846pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 028663-SI7716ADN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 846pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI7716ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7716ADN-T1-GE3CT-ND
Single FETs, MOSFETs SI7716ADN-T1-GE3CT-ND
N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7716ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7716ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7716ADN-T1-GE3DKR-ND
N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7716ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7716ADN-T1-GE3TR-ND
Single FETs, MOSFETs SI7716ADN-T1-GE3TR-ND
N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
SMD 30V 16A MOSFET Transistor
2088-SI7716ADN-T1-GE3
SMD 30V 16A MOSFET Transistor 2088-SI7716ADN-T1-GE3
N-CH MOSFET 30V 16A 13.5mR Surface Mount Product overview: SI7716ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 16A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7716ADN-T1-GE 3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 30V 16A 13.5mR Surface Mount Product overview: SI7716ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 16A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7716ADN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7716ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7716ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7716ADN-T1-GE3
MOSFET N-CH 30V 16A PPAK1212-8

MOSFET N-CH 30V 16A PPAK1212-8

Supplier's Site
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI7716ADN-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI7716ADN-T1-GE3
30V 16A 13.5mΩ@10A,10V 2.5V@250uA null PowerPAK1212-8 MOSFETs ROHS

30V 16A 13.5mΩ@10A,10V 2.5V@250uA null PowerPAK1212-8 MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type Vishay - 18X0024 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type Vishay
18X0024
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type Vishay 18X0024
MOSFET, N CHANNEL, 30V, 16A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 16A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, 16A Powerpak, Full Reel; Channel Type Vishay - 16P3860 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 16A Powerpak, Full Reel; Channel Type Vishay
16P3860
N Channel Mosfet, 30V, 16A Powerpak, Full Reel; Channel Type Vishay 16P3860
N CHANNEL MOSFET, 30V, 16A POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:27.7W RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 16A POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:27.7W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7716ADN-T1-GE3 028663-SI7716ADN-T1-GE3 SI7716ADN-T1-GE3CT-ND 2088-SI7716ADN-T1-GE3 SI7716ADN-T1-GE3 SI7716ADN-T1-GE3 SI7716ADN-T1-GE3 18X0024 16P3860
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7716ADN-T1-GE3 Single FETs, MOSFETs SMD 30V 16A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type Vishay N Channel Mosfet, 30V, 16A Powerpak, Full Reel; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 16000 milliamps 16000 milliamps 16000 milliamps
PD 3500 milliwatts 3500 to 27700 milliwatts 27700 milliwatts 3500 milliwatts 27700 milliwatts
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