Manufacturer: Vishay
Win Source Part Number: 1096192-SI7703EDN-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: SI7703EDN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 800μA
Max Gate Charge: 18nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 48 mOhm @ 6.3A, 4.5V
Alternative Parts (Cross-Reference): NTF6P02T3; FDT434P-Q; NVF6P02T3G; FDT434P;
Introduction Date: May 20, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Communications & Networking, Industrial
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096192-SI7703EDN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7703EDN-T1-GE3 |
| Polarity | P-Channel; P-Channel |
| V(BR)DSS | 20 volts |
| PD | 1300 milliwatts |
