Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7703EDN-T1-GE3 SI7703EDN-T1-GE3

Manufacturer: Vishay Win Source Part Number: 1096192-SI7703EDN-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Family Name: SI7703EDN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 1V @ 800μA Max Gate Charge: 18nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 48 mOhm @ 6.3A, 4.5V Alternative Parts (Cross-Reference): NTF6P02T3; FDT434P-Q; NVF6P02T3G; FDT434P; Introduction Date: May 20, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Application Field: Used in Communications & Networking, Industrial