Vishay Intertechnology, Inc. MOSFET SI7684DP-T1-E3

Description
MOSFET 30V 20A 27.5W
Description
MOSFET 30V 20A 27.5W
Datasheet
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The Si7684DP-T1-E3 is an N-channel 30-V MOSFET in a PowerPAK SO-8 package, measuring 6.15 mm by 5.15 mm, designed for high-side DC/DC conversion in notebook and server applications. It has a drain-source on-state resistance of 0.0090 Ω at 10 V gate-source voltage and 0.011 Ω at 4.5 V, with a continuous drain current of 20 A at 25 °C and a pulsed drain current of 50 A. The device features a total gate charge of 11 nC, and its thermal resistance from junction to case is 3.5 °C/W. It meets IEC 61249-2-21 halogen-free standards and is lead-free. The operating junction and storage temperature range is -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

The Si7684DP-T1-E3 is an N-channel 30-V MOSFET in a PowerPAK SO-8 package, measuring 6.15 mm by 5.15 mm, designed for high-side DC/DC conversion in notebook and server applications. It has a drain-source on-state resistance of 0.0090 Ω at 10 V gate-source voltage and 0.011 Ω at 4.5 V, with a continuous drain current of 20 A at 25 °C and a pulsed drain current of 50 A. The device features a total gate charge of 11 nC, and its thermal resistance from junction to case is 3.5 °C/W. It meets IEC 61249-2-21 halogen-free standards and is lead-free. The operating junction and storage temperature range is -55 °C to 150 °C.

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Sheung Wan, Hong Kong
MOSFET 30V 20A 27.5W

MOSFET 30V 20A 27.5W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7684DP-T1-E3
Product Name MOSFET
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