Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7634BDP-T1-E3

Description
MOSFET N-CH 30V 40A PPAK SO-8
  • Single FETs, MOSFETs - SI7634BDP-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7634BDP-T1-E3 - 064570-SI7634BDP-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SI7634BDP-T1-E3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7634BDP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 30V, 40A, Soic; Channel Type Vishay - 16P3854 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 30V 40A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7634BDP-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7634BDP-T1-E3
Single FETs, MOSFETs SI7634BDP-T1-E3
MOSFET N-CH 30V 40A PPAK SO-8

MOSFET N-CH 30V 40A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7634BDP-T1-E3 - 064570-SI7634BDP-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7634BDP-T1-E3
064570-SI7634BDP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7634BDP-T1-E3 064570-SI7634BDP-T1-E3
Manufacturer: Vishay Win Source Part Number: 064570-SI7634BDP-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 3150pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.4 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 064570-SI7634BDP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.6V @ 250μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 3150pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.4 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI7634BDP-T1-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7634BDP-T1-E3-ND
Single FETs, MOSFETs SI7634BDP-T1-E3-ND
N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SI7634BDP-T1-E3
MOSFET SI7634BDP-T1-E3
MOSFET 30V Vds 20V Vgs PowerPAK SO-8

MOSFET 30V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7634BDP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7634BDP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7634BDP-T1-E3
MOSFET N-CH 30V 40A PPAK SO-8

MOSFET N-CH 30V 40A PPAK SO-8

Supplier's Site
N Channel Mosfet, 30V, 40A, Soic; Channel Type Vishay - 16P3854 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 40A, Soic; Channel Type Vishay
16P3854
N Channel Mosfet, 30V, 40A, Soic; Channel Type Vishay 16P3854
N CHANNEL MOSFET, 30V, 40A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 40A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7634BDP-T1-E3 064570-SI7634BDP-T1-E3 SI7634BDP-T1-E3-ND SI7634BDP-T1-E3 SI7634BDP-T1-E3 16P3854
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7634BDP-T1-E3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 30V, 40A, Soic; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 40000 milliamps 40000 milliamps
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