Vishay Precision Group -30V 35A MOSFET Transistor SI7625DN-T1-GE3

Description
P-CH MOSFET, -30V, 35A, 7mR, 8-Pin PowerPAK Product overview: SI7625DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7625DN-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
P-CH MOSFET, -30V, 35A, 7mR, 8-Pin PowerPAK Product overview: SI7625DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7625DN-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
-30V 35A MOSFET Transistor
278-SI7625DN-T1-GE3
-30V 35A MOSFET Transistor 278-SI7625DN-T1-GE3
P-CH MOSFET, -30V, 35A, 7mR, 8-Pin PowerPAK Product overview: SI7625DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7625DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, -30V, 35A, 7mR, 8-Pin PowerPAK Product overview: SI7625DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7625DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7625DN-T1-GE3 - 1249491-SI7625DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7625DN-T1-GE3
1249491-SI7625DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7625DN-T1-GE3 1249491-SI7625DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1249491-SI7625DN-T1- GE3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK 1212-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Family Name: Si7625DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK 1212-8 Channel Type Type: P Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4427pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.7W (Ta), 52W (Tc) Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): RQ3E120ATTB; RQ3E100ATTB; Upa2717gr; Introduction Date: March 23, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1249491-SI7625DN-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Family Name: Si7625DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 126nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4427pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.7W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): RQ3E120ATTB; RQ3E100ATTB; Upa2717gr;
Introduction Date: March 23, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI7625DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7625DN-T1-GE3
Single FETs, MOSFETs SI7625DN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8

MOSFET P-CH 30V 35A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7625DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7625DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7625DN-T1-GE3TR-ND
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7625DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7625DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7625DN-T1-GE3CT-ND
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7625DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7625DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7625DN-T1-GE3DKR-ND
P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Mosfet Transistor, P Channel, -35 A, -30 V, 0.0088 Ohm, -4.5 V, -1 V Rohs Compliant Vishay - 97W2704 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -35 A, -30 V, 0.0088 Ohm, -4.5 V, -1 V Rohs Compliant Vishay
97W2704
Mosfet Transistor, P Channel, -35 A, -30 V, 0.0088 Ohm, -4.5 V, -1 V Rohs Compliant Vishay 97W2704
MOSFET Transistor, P Channel, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -30V, -35A, Powerpak 1212-8; Channel Type Vishay - 69W7232 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -35A, Powerpak 1212-8; Channel Type Vishay
69W7232
Mosfet, P Channel, -30V, -35A, Powerpak 1212-8; Channel Type Vishay 69W7232
MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1VRoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1VRoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type Vishay - 86R3928 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type Vishay
86R3928
Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type Vishay 86R3928
MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:52W RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:52W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7625DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7625DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7625DN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8

MOSFET P-CH 30V 35A PPAK1212-8

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI7625DN-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI7625DN-T1-GE3
30V 35A 7mΩ@15A,10V 2.5V@250uA P Channel - MOSFETs ROHS

30V 35A 7mΩ@15A,10V 2.5V@250uA P Channel - MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8

MOSFET -30V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI7625DN-T1-GE3 1249491-SI7625DN-T1-GE3 SI7625DN-T1-GE3 SI7625DN-T1-GE3TR-ND 97W2704 69W7232 86R3928 SI7625DN-T1-GE3 SI7625DN-T1-GE3 SI7625DN-T1-GE3
Product Name -30V 35A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7625DN-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet Transistor, P Channel, -35 A, -30 V, 0.0088 Ohm, -4.5 V, -1 V Rohs Compliant Vishay Mosfet, P Channel, -30V, -35A, Powerpak 1212-8; Channel Type Vishay Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
PD 52000 milliwatts 3700 to 52000 milliwatts 3700 milliwatts 52000 milliwatts 3700 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 PowerPAK® 1212-8 PowerPAK® 1212-8 TO-3 TO-3 TO-3 PowerPAKR 1212-8
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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