Manufacturer: Vishay
Win Source Part Number: 933647-SI7623DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI7623
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7623DN-T1-GE3TR, SI7623DN-T1-GE3CT, SI7623DN-T1-GE3DKR, SI7623DNT1GE3
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET -20V 3.8mOhm@10V 35A P-Ch G-III Product overview: SI7623DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 3.8mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 3.8mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7623DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 35A PPAK1212-8
MOSFET P-CH 20V 35A PPAK1212-8
MOSFET Transistor, P Channel, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV RoHS Compliant: Yes
MOSFET -20V 3.8mOhm@10V 35A P-Ch G-III
MOSFET -20V Vds 12V Vgs PowerPAK 1212-8
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 933647-SI7623DN-T1-GE3 | SI7623DN-T1-GE3TR-ND | 278-SI7623DN-T1-GE3 | SI7623DN-T1-GE3 | SI7623DN-T1-GE3 | 19X1963 | 880-SI7623DN-T1-GE3 | SI7623DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7623DN-T1-GE3 | Single FETs, MOSFETs | -20V 3.8mOhm 10V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -35 A, -20 V, 0.0031 Ohm, -10 V, -400 Mv Rohs Compliant Vishay | MOSFET -20V 3.8mOhm@10V 35A P-Ch G-III | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAKR 1212-8 | TO-3 | |||
| PD | 52000 milliwatts | 3700 milliwatts | 3700 milliwatts | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
