MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 933647-SI7623DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI7623
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7623DN-T1-GE3TR, SI7623DN-T1-GE3CT, SI7623DN-T1-GE3DKR, SI7623DNT1GE3
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET Transistor, P Channel, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV RoHS Compliant: Yes
MOSFET -20V 3.8mOhm@10V 35A P-Ch G-III
MOSFET -20V Vds 12V Vgs PowerPAK 1212-8
MOSFET P-CH 20V 35A PPAK1212-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7623DN-T1-GE3 | 933647-SI7623DN-T1-GE3 | SI7623DN-T1-GE3TR-ND | 19X1963 | 880-SI7623DN-T1-GE3 | SI7623DN-T1-GE3 | SI7623DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7623DN-T1-GE3 | Single FETs, MOSFETs | Mosfet Transistor, P Channel, -35 A, -20 V, 0.0031 Ohm, -10 V, -400 Mv Rohs Compliant Vishay | MOSFET -20V 3.8mOhm@10V 35A P-Ch G-III | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 20 volts | -20 volts | |||||
| IDSS | 35000 milliamps | ||||||
| PD | 3700 milliwatts | 3700 milliwatts |
