P-CH MOSFET 20V 35A 3.9mR TO-252-3 SMT Product overview: SI7615DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7615DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 109913-SI7615DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: Si7615DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 183nC @ 10V
Max Input Capacitance: 6000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): AON7421; AON7423; RQ3C150BCTB;
Introduction Date: March 17, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 20V 35A PPAK1212-8
MOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3
MOSFET P-CH 20V 35A PPAK1212-8
MOSFET Transistor; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:52W RoHS Compliant: Yes
MOSFET Transistor, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7615DN-T1-GE3 | 109913-SI7615DN-T1-GE3 | SI7615DN-T1-GE3DKR-ND | SI7615DN-T1-GE3 | SI7615DN-T1-GE3 | SI7615DN-T1-GE3 | 63R6007 | 15R5220 |
| Product Name | 20V 35A TO-252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7615DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor; Channel Type Vishay | Mosfet Transistor, Full Reel; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||||
| PD | 52000 milliwatts | 3700 to 52000 milliwatts | 3700 milliwatts | 52000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 20 volts | 20 volts |
