P-Channel 40V 18A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 40V 18A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 40V 18A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
P-CH MOSFET -40V, 9.3A, 25mR, SMT Product overview: SI7611DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7611DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096183-SI7611DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1980pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET P-CH 40V 18A PPAK1212-8
MOSFET, P CHANNEL, -40V, -18A, POWERPAK 1212-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1VRoHS Compliant: Yes
P CHANNEL MOSFET, -40V, 18A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:3.7W RoHS Compliant: Yes
MOSFET P-CH 40V 18A PPAK1212-8
MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7611DN-T1-GE3DKR-ND | 278-SI7611DN-T1-GE3 | 1096183-SI7611DN-T1-GE3 | SI7611DN-T1-GE3 | 69W7231 | 16P3852 | SI7611DN-T1-GE3 | SI7611DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | -40V 9.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7611DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -40V, -18A, Powerpak 1212-8; Channel Type Vishay | P Channel Mosfet, -40V, 18A, Powerpak, Full Reel; Channel Type Vishay | Single FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | TO-3 | TO-3 | PowerPAK® 1212-8 | ||
| PD | 39000 milliwatts | 3700 to 39000 milliwatts | 3700 milliwatts | 3700 milliwatts | ||||
| TJ | -50 C (-58 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) |
