Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7540DP-T1-E3

Description
Mosfet Array N and P-Channel 12V 7.6A, 5.7A 1.4W Surface Mount PowerPAK® SO-8 Dual
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Description
Mosfet Array N and P-Channel 12V 7.6A, 5.7A 1.4W Surface Mount PowerPAK® SO-8 Dual
Request a Quote Datasheet

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FET, MOSFET Arrays - SI7540DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7540DP-T1-E3TR-ND
FET, MOSFET Arrays SI7540DP-T1-E3TR-ND
Mosfet Array N and P-Channel 12V 7.6A, 5.7A 1.4W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array N and P-Channel 12V 7.6A, 5.7A 1.4W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7540DP-T1-E3 - 028656-SI7540DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7540DP-T1-E3
028656-SI7540DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7540DP-T1-E3 028656-SI7540DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 028656-SI7540DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: Si7540DP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dual Maximum Power Dissipation: 1.4W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 7.6A, 5.7A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V Alternative Parts (Cross-Reference): SI7540DP-T1-GE3; Si7540DP-E3 ; Si7540ADP-T1-GE3; Introduction Date: August 08, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028656-SI7540DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si7540DP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.6A, 5.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.8A, 4.5V
Alternative Parts (Cross-Reference): SI7540DP-T1-GE3; Si7540DP-E3 ; Si7540ADP-T1-GE3;
Introduction Date: August 08, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7540DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7540DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7540DP-T1-E3
MOSFET N/P-CH 12V 7.6A PPAK SO8

MOSFET N/P-CH 12V 7.6A PPAK SO8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7540DP-T1-E3TR-ND 028656-SI7540DP-T1-E3 SI7540DP-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7540DP-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SO-8; PowerPAK® SO-8 Dual SO-8; SOT3; PowerPAK SO-8 Dual
Polarity P-Channel
V(BR)DSS 12 volts
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